pn junction
英
美
网络 Pn结; PN 结; 接合面
双语例句
- GaAs PN junction injection laser
砷化镓PN结注入式激光器 - Apply the Software of Matlab to Seek the Empirical Formula in Verify Volt-ampere Relation of PN Junction Characteristic experiment
应用Matlab软件在验证PN结伏安关系特性实验中求经验公式 - The dependence of InGaAs photodetectors ′ performance on area and perimeter of the PN junction
InGaAs探测器性能与结面积和周长的关系研究 - Constant Temperature Control of Semiconductor Laser Based on Temperature Characteristics of pn Junction
采用半导体激光器自身pn结特性测温的半导体激光器恒温控制 - Trench capacitors based on semiconductor pn junction capacitance
利用半导体pn结结电容构成的沟道式电容器 - PN junction sensor-based high-precision digital temperature wells Miriam
基于PN结传感器高精度数显井中水温仪电测水深水温记录仪 - A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。 - Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论NPN型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。 - Electrical properties of PN junction devices under tritium irradiation
PN结型器件在氚钛片辐照下电输出性能 - From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained.
通过测量结果和计算结果的归一化比较，获得了其表面复合速率。 - Experiments on diffusing PN junction in n-type semiconductors with microwave energy were carried out.
用微波加热方法进行了硼&铝杂质在n型硅半导体材料中扩散PN结的试验。 - The measuring current and voltage in the PN junction loop all show etch-stop clearly.
新系统PN结偏置独立回路中的监测电流和电压均能给出明显的腐蚀终止指示。 - The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。 - Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis.
根据理论分析，修正了反偏PN结漏电流理论。 - The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。 - The auto-measuring means of positive volt-ampere characteristics of PN junction at different temperature is introduced, and the relation of volt-ampere characteristics of PN junction with temperature is discussed.
介绍了在不同温度下，PN结正向伏安特性曲线的自动测量方法，讨论了PN结伏安特性与温度的关系。 - Setting up PIN diode Physics Models and computing the parameters based on the PN junction theory;
以PN结理论为基础，建立PIN管的物理模型，计算PIN二极管精确的模型参数； - Finally, the mechanism of PN junction leakage current is discussed.
讨论了缺陷运动对PN结漏电流影响的机理。 - The theory of injection photosensor is based on the photovoltaic expression of pn junction.
注入光敏器件的理论是建立在公认的pn结光伏公式基础上的，有着可靠根据。 - The effects of the relative position between the interfaces of pn junction ( emitter base) and SiGe/ Si on the current gain and frequency performance of SiGe/ Si HBT are investigated by simulation and experiment.
从模拟和实验两方面研究了SiGe/SiHBT发射结中pn结界面和SiGe/Si界面的相对位置对器件的电流增益和频率特性的影响。 - The formation and measurability of built in electrical field and contact potential in a semiconductor pn junction are discussed, and a paradox that students usually raised is answered.
讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题。 - The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.
衬底pn结间隔能用标准硅工艺实现而不需另外的工艺。 - The impacts of the substrate pn junction isolation on the inductor quality factor are studied.
研究了衬底结隔离对硅集成电感的品质因素Q的影响。 - The storage mechanism of pn junction diode is illustrated and the basic design of the device, manufacture methods as well as its performance parameters are also described.
阐明了pn结二极管存储机理，叙述了该器件的基本设计，制作方法和性能参数。 - Based on the evaluation program, the burst-noise analysis module, and the evaluation-model-based module have been designed an implement, it using for assess and forecast anti-radiation of SiO2 dielectric, pn junction and Silicon material.
在评价方案的基础上，设计并实现了爆裂噪声分析和基于评价模型的评价分析模块，实现了对SiO2介质、pn结与硅材料的抗辐射评估及预测。 - Radiation effect and noise mechanism of SiO2 dielectric, pn junction and Silicon material have been studied in this paper, and the relationship between the 1/ f noise and material defects.
本文研究了SiO2介质、pn结和硅材料的辐射损伤机制及1/f噪声与材料缺陷之间的关系。 - The experimental results can be well explained based on our previously proposed non-equilibrium PN junction degradation model.
之前提出的非平衡PN结退化模型能很好地解释p型器件的退化特征。 - It is requested temperature of diffuse gas at 20 ℃(± 0.1 ℃) during semiconductor PN junction production process.
在半导体PN结器件生产过程中，要求扩散气体恒温在20℃（±0.1℃）。 - PN junction is the heart of solar cells.
PN结是太阳电池的核心，可以说没有PN结就没有现在的太阳能电池。